| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-184-1162 (011841162) |
| NCB Code | USA (01) |
| Manufacturer | Dla Land And Maritime, National Semiconductor Corp, Mmi Amd, Advanced Micro Devices Inc |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 8103503RB | dla land and maritime | microcircuit memory | RFQ |
| PAL14H4MJ | national semiconductor corp | microcircuit memory | RFQ |
| PAL14H4MJ 883B | mmi amd | microcircuit memory | RFQ |
| PAL14H4MJ | mmi amd | microcircuit memory | RFQ |
| ROM-PROM HEAD 060 | dla land and maritime | microcircuit memory | RFQ |
| PAL14H4 | advanced micro devices inc | microcircuit memory | RFQ |
| 5962-8103503BRX | dla land and maritime | microcircuit memory | RFQ |
| PAL14H4 | mmi amd | microcircuit memory | RFQ |
| DMPAL14H4J 883 | national semiconductor corp | microcircuit memory | RFQ |
| 14H4 | mmi amd | microcircuit memory | RFQ |
| 5962-8103503BRB | dla land and maritime | microcircuit memory | RFQ |
| DMPAL14H4J | national semiconductor corp | microcircuit memory | RFQ |
| PAL14H4MJ 883B | national semiconductor corp | microcircuit memory | RFQ |
| 81035 | dla land and maritime | microcircuit memory | RFQ |
| DMPAL14H4MJ 883B | national semiconductor corp | microcircuit memory | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.060 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 2.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | BIPOLAR AND PROGRAMMABLE AND MONOLITHIC AND HERMETICALLY SEALED |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | BIPOLAR METAL-OXIDE SEMICONDUCTOR |
| CQZP | INPUT CIRCUIT PATTERN | 28 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-8 MIL-M-38510 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES MAXIMUM OUTPUT SINK |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS NOMINAL POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | PAL |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/503 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5962-01-184-1162, 5962011841162 | ||||
| 5905-00-000-0136 (5905000000136) | 5905-00-001-2573 (5905000012573) | 5905-00-001-2813 (5905000012813) | 5905-00-001-2834 (5905000012834) | |
| 5905-00-001-2852 (5905000012852) | 5905-00-001-2882 (5905000012882) | 5905-00-001-2890 (5905000012890) | 5905-00-001-2920 (5905000012920) | |
| 5905-00-001-2934 (5905000012934) | 5905-00-001-2951 (5905000012951) | 5905-00-001-2952 (5905000012952) | 5905-00-001-2954 (5905000012954) | |
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